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| APTM10TDUM09PG Triple dual common source VDSS = 100V RDSon = 9m typ @ Tj = 25C ID = 139A @ Tc = 25C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies S5/S6 MOSFET Power Module D1 D3 D5 G1 G3 G5 S1 S1/S2 S3 S3/S4 S5 S2 G2 S4 G4 S6 G6 D2 D4 D6 Features * Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability * RoHS Compliant Max ratings 100 139 100 430 30 10 390 100 50 3000 Unit V A V m W A mJ D1 D3 D5 G1 S1/S2 S1 S2 G2 S3/S4 G3 S3 S4 G4 S5/S6 G5 S5 S6 G6 D2 D4 D6 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Tc = 25C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10TDUM09PG - Rev 1 July, 2006 APTM10TDUM09PG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25C Tj = 125C Typ VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V 9 2 Max 100 500 10 4 100 Unit A m V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =139A Inductive switching @ 125C VGS = 15V VBus = 66V ID = 139A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Min Typ 9875 3940 1470 350 60 180 35 70 95 125 552 604 608 641 Max Unit pF nC ns J J Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Min Typ Tc = 25C Tc = 80C VGS = 0V, IS = - 139A IS = - 139A VR = 66V diS/dt = 100A/s Tj = 25C Tj = 25C 270 2.9 Max 139 100 1.3 5 Unit A V V/ns ns C July, 2006 2-6 APTM10TDUM09PG - Rev 1 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 139A di/dt 700A/s VR VDSS Tj 150C www.microsemi.com APTM10TDUM09PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 3 Typ Max 0.32 150 125 100 5 250 Unit C/W V C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 SP6-P Package outline (dimensions in mm) 5 places (3:1) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM10TDUM09PG - Rev 1 July, 2006 APTM10TDUM09PG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 ID, Drain Current (A) VGS=15V, 10V & 9V 600 ID, Drain Current (A) 500 400 300 200 100 0 Transfert Characteristics V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 100 80 60 40 20 0 8V 7V 6V T J=25C T J=125C T J=-55C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) Normalized to V GS=10V @ 69.5A 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 140 120 100 80 60 40 20 0 25 50 75 100 125 150 July, 2006 4-6 APTM10TDUM09PG - Rev 1 1.1 V GS=10V 1 0.9 0.8 0 50 100 150 200 ID, Drain Current (A) VGS=20V TC, Case Temperature (C) www.microsemi.com APTM10TDUM09PG RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000 limited by RDSon VGS=10V ID= 69.5A 100s 100 1ms 10 Single pulse TJ=150C TC=25C 10ms 1 1 10 100 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 100 200 300 400 500 July, 2006 5-6 APTM10TDUM09PG - Rev 1 VDS=50V V DS =80V ID=139A T J=25C VDS=20V 10000 Ciss Coss Crss 1000 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com APTM10TDUM09PG Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 50 100 150 200 I D, Drain Current (A) Switching Energy vs Current 1.5 Switching Energy (mJ) VDS=66V RG=5 TJ=125C L=100H VDS=66V RG=5 T J=125C L=100H Rise and Fall times vs Current 160 140 t r and tf (ns) 120 100 80 60 40 20 0 250 0 50 100 150 200 ID, Drain Current (A) 250 V DS=66V R G=5 T J=125C L=100H t d(off) tf tr td(on) Switching Energy vs Gate Resistance 2.5 VDS=66V ID=139A T J=125C L=100H Eon and Eoff (mJ) Eoff 2 1.5 1 0.5 0 Eoff 1 Eon 0.5 Eon Eon 0 0 50 100 150 200 250 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% RG=5 T J=125C T C=75C ZVS Hard switching ZCS 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 300 250 Frequency (kHz) 200 150 100 50 0 25 50 75 100 125 150 I D, Drain Current (A) 100 TJ=150C TJ=25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 July, 2006 6-6 APTM10TDUM09PG - Rev 1 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com |
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